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121 digital tasks КНИГИ ;АППАРАТУРА Название: 121 digital initiatives Формат: PDF Размер: 12 MbCтраницы: sixty five Язык: English Сборник схем. Книга из серии МРБ.com. zero

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Electronic Devices and Circuits by K. Lal Kishore PDF

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7. Its resistivity was about 5 x 1014 ohm-cm and its dielectric strength at least 10 7 V/cm at room temperature. Silicon Tetrachloride and Tetrafluoride Reaction The ammonolysis of silicon tetrachloride through a complicated series of reactions can produce alpha-silicon nitride according to Chu et al (7). The nitride films were deposited on silicon substrates at 1000 to 1200 C using ammonia (NH 3 ) at flow rates of 6 to 16 lit/min. and silicon tetrachloride (SiC1 4 ) at flow rates of 3 x 10- 4 to 3 x 10- 3 moles/min.

Dalton and Drobek (15) conducted electron diffraction studies on silicon nitride films (prepared by various methods) and found that films varied considerably in crystallite size and structure, alpha, beta, and alpha-beta mixtures of silicon nitride. They observed that pyrolytically deposited (using SiH 4 or SiC1 4 ) films were usually amorphous « 20 R); however, if these films were deposited at temperatures < 900°C on improperly cleaned substrates they were crystalline and invariably alpha-silicon nitride.

4M in KN03. Figures 111-16, 111-17 and 111-18 and Table 111-4 summarize the film conversion process variables and effects: 49 Norm&lllz('d conVl'rsion rllte (IIi dD/dO. Tota1 fihn CU"rt~nt dt'ns'til~S. 0 1:1,0 TIME (MINUTES) Figure III-16. 5 mA/cm 2 • o Total film thickness; o converted film thickness. ,O 11,0 r.. tc. A convr1"trd film formed/min 1H.!! 1111 4,22 4,:1a Table III-4. Conversion rate, total film growth, and normalized conversion rate for anodization of silicon nitride films on silicon at various current densities.

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