Download PDF by S.K. Pillai: A First Course on Electrical Drives

By S.K. Pillai

ISBN-10: 047021399X

ISBN-13: 9780470213995

This creation to electric drives offers with points of either DC and AC automobiles, the dynamics of the force approach, inherent regular kingdom features of DC and AC automobiles, and the sorts of equipment used to change those features to fit particular specifications. the writer discusses an important temporary strategies: beginning and braking and varied tools used to estimate the ranking of vehicles subjected to diverse load cycles. One bankruptcy is dedicated to the more and more well known thyristor managed force. Solved and unsolved difficulties are supplied to demonstrate the innovations awarded.

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Extra info for A First Course on Electrical Drives

Example text

1. (Prof. 2. Fabrication of four-probe electrodes With the nanowires grown and their lattice structure characterized, we have proceeded to make four-probe electrodes for electrical transport measurements. In contrast to many other groups who usually apply two-probe measurements, we have attempted to focus our efforts on four-probe measurements in order to obtain the intrinsic electronic properties of the nanowires, without them being complicated by the contact resistances between the electrodes and the nanowire.

Oshima, C. Mazure, F. Letertre, and H. Iwai, "Alter- 30 S. Cristoloveanu et al. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. native dielectrics for advanced SOI MOSFETs: thermal properties and short channel effects", IEEE Int. , Charleston, USA (2004). D. Esseni, M. K. Celler, C. Fiegna, and E. Sangiorgi, "An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode", IEEE Trans. Electron Devices, vol. 50, no. 3 (2003) 802-808. R. Cirba, S. D. C. M.

However, film thinning makes the advantage of heavy doping gradually vanish. For 15 nm thick films, not only does AVr become reasonable but also the doping effect is irrelevant. In other words, an undoped and ultra-thin MOSFET is particularly resistant to short-channel effects. Major side benefits are the high carrier mobility and excellent subthreshold slope. The difficulty of controlling or tailoring the doping in thin films is naturally erased. There are additional solutions for further improvement of AVr which aim to preclude the fringing field penetration in the BOX and substrate.

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A First Course on Electrical Drives by S.K. Pillai


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